Invention Grant
- Patent Title: Field effect transistors (FETS) and methods of manufacture
- Patent Title (中): 场效应晶体管（FETS）和制造方法
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Application No.: US13345142Application Date: 2012-01-06
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Publication No.: US08445949B2Publication Date: 2013-05-21
- Inventor: Brent A. Anderson , Edward J. Nowak
- Applicant: Brent A. Anderson , Edward J. Nowak
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Richard Kotulak
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
An improved field effect transistors (FETs) and methods of manufacturing the field effect transistors (FETs) are provided. The method of manufacturing a zero capacitance random access memory cell (ZRAM) includes comprises forming a finFET on a substrate and enhancing a storage capacitance of the finFET. The enhancement can be by either adding a storage capacity to the finFET or altering a portion of the finFET after formation of a fin body of the finFET.
Public/Granted literature
- US20120104475A1 FIELD EFFECT TRANSISTORS (FETS) AND METHODS OF MANUFACTURE Public/Granted day:2012-05-03
Information query
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