Invention Grant
- Patent Title: Bidirectional silicon carbide transient voltage suppression devices
- Patent Title (中): 双向碳化硅瞬态电压抑制装置
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Application No.: US12408167Application Date: 2009-03-20
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Publication No.: US08445917B2Publication Date: 2013-05-21
- Inventor: Sarah Kay Haney , Sei-Hyung Ryu
- Applicant: Sarah Kay Haney , Sei-Hyung Ryu
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, PA
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/861
Abstract:
An electronic device includes a silicon carbide layer having a first conductivity type and having a first surface and a second surface opposite the first surface, and first and second silicon carbide Zener diodes on the silicon carbide layer. Each of the first and second silicon carbide Zener diodes may include a first heavily doped silicon carbide region having a second conductivity type opposite the first conductivity type on the silicon carbide layer, and an ohmic contact on the first heavily doped silicon carbide region.
Public/Granted literature
- US20100237356A1 BIDIRECTIONAL SILICON CARBIDE TRANSIENT VOLTAGE SUPPRESSION DEVICES Public/Granted day:2010-09-23
Information query
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