Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13027551Application Date: 2011-02-15
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Publication No.: US08445360B2Publication Date: 2013-05-21
- Inventor: Masayuki Nakanishi , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota
- Applicant: Masayuki Nakanishi , Tetsuji Togawa , Kenya Ito , Masaya Seki , Kenji Iwade , Takeo Kubota
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Ebara Corporation,Kabushiki Kaisha Toshiba
- Current Assignee: Ebara Corporation,Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2010-036114 20100222
- Main IPC: H01L21/46
- IPC: H01L21/46 ; H01L21/30 ; H01L21/78 ; H01L21/301
Abstract:
A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.
Public/Granted literature
- US20110207294A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-08-25
Information query
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