Invention Grant
US08445319B2 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element
有权
非易失性存储元件及其制造方法以及使用非易失性存储元件的非易失性半导体装置
- Patent Title: Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element
- Patent Title (中): 非易失性存储元件及其制造方法以及使用非易失性存储元件的非易失性半导体装置
-
Application No.: US13205408Application Date: 2011-08-08
-
Publication No.: US08445319B2Publication Date: 2013-05-21
- Inventor: Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
- Applicant: Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-149032 20070605
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
Public/Granted literature
Information query
IPC分类:
