Invention Grant
- Patent Title: Latency circuit and semiconductor device comprising same
- Patent Title (中): 延迟电路和包括该延迟电路的半导体器件
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Application No.: US12857762Application Date: 2010-08-17
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Publication No.: US08437206B2Publication Date: 2013-05-07
- Inventor: In-Woo Jun , Byung Hoon Jeong , Min Soo Kim
- Applicant: In-Woo Jun , Byung Hoon Jeong , Min Soo Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2009-0097851 20091014
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A latency circuit comprises a latency control block, an internal read command generator, and a latency signal generation unit. The latency control block generates a plurality of first control clocks by delaying a delay sync signal generated based on an external clock, and generates a second control clock having a margin with respect to a read command decoded based on the delay sync signal. The internal read command generator samples the second control clock using the decoded read command and generates an internal read command based on a sampled second control clock. The latency signal generation unit generates a latency signal based on a shifting operation performed on the internal read command using the plurality of first control clocks.
Public/Granted literature
- US20110085394A1 LATENCY CIRCUIT AND SEMICONDUCTOR DEVICE COMPRISING SAME Public/Granted day:2011-04-14
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