Invention Grant
- Patent Title: Word-line level shift circuit
- Patent Title (中): 字线电平移位电路
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Application No.: US13366804Application Date: 2012-02-06
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Publication No.: US08437201B2Publication Date: 2013-05-07
- Inventor: Igor Arsovski , Matthew W. Deming , Darryl R. Hill , Harold Pilo , Reid A. Wistort
- Applicant: Igor Arsovski , Matthew W. Deming , Darryl R. Hill , Harold Pilo , Reid A. Wistort
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent David A. Cain
- Main IPC: G11C8/08
- IPC: G11C8/08

Abstract:
A dual word-line level shifter circuit and associated SRAM. A circuit is disclosed that includes a first transistor gated by a data input at the lower voltage, and a second transistor gated by a restore input at the higher voltage, wherein the first and second transistors are coupled along a series path to a source at the higher voltage; a control node along the series path; an output node coupled to the control node via a first pair of parallel transistors; and a feedback circuit having a second pair of parallel transistors and a feedback transistor, wherein the feedback transistor couples the second pair of parallel transistors to the control node and is gated by the output node.
Public/Granted literature
- US20120134221A1 WORD-LINE LEVEL SHIFT CIRCUIT Public/Granted day:2012-05-31
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