Invention Grant
- Patent Title: Reversible low-energy data storage in phase change memory
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Application No.: US12958502Application Date: 2010-12-02
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Publication No.: US08437182B2Publication Date: 2013-05-07
- Inventor: Johannes A. Kalb , Brett E. Klehn
- Applicant: Johannes A. Kalb , Brett E. Klehn
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Cool Patent, P.C.
- Main IPC: G11C11/09
- IPC: G11C11/09

Abstract:
A phase change memory (PCM) device utilizes low energy pulses to write data to PCM storage elements (cells). Methods, devices and systems are described that use low energy reset pulses to reset cells that have been previously set using a method that keeps a portion of the PCM cells in an amorphous phase. The reset is reversible by utilizing a low energy set pulse.
Public/Granted literature
- US08467239B2 Reversible low-energy data storage in phase change memory Public/Granted day:2013-06-18
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