Invention Grant
- Patent Title: Optical refreshing of loadless for transistor SRAM cells
- Patent Title (中): 晶体管SRAM单元无负载的光学刷新
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Application No.: US12311518Application Date: 2007-10-03
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Publication No.: US08437176B2Publication Date: 2013-05-07
- Inventor: Goran Krilic
- Applicant: Goran Krilic
- Agent Shalini Venkatesh
- Priority: WOPCT/IB2006/002978 20061011
- International Application: PCT/IB2007/003105 WO 20071003
- International Announcement: WO2008/044139 WO 20080417
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
Loadless 4 transistor SRAM cell operation can be substantially improved, yielding area saving and more stable operation by use of optical-light load. Parasitic photocurrents in PMOS anodes-substrate junctions act as load currents. Light can be introduced by either ambient light through transparent window on top of the chip or by cheap LED diode attached to chip surface.
Public/Granted literature
- US20100034013A1 OPTICAL REFRESHING OF LOADLESS FOR TRANSISTOR SRAM CELLS Public/Granted day:2010-02-11
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