Invention Grant
US08436641B2 Circuit and method for generating on-die termination signal and semiconductor apparatus using the same
有权
用于产生片上终端信号的电路和方法及使用其的半导体装置
- Patent Title: Circuit and method for generating on-die termination signal and semiconductor apparatus using the same
- Patent Title (中): 用于产生片上终端信号的电路和方法及使用其的半导体装置
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Application No.: US12968141Application Date: 2010-12-14
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Publication No.: US08436641B2Publication Date: 2013-05-07
- Inventor: Choung Ki Song
- Applicant: Choung Ki Song
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2010-0095619 20100930
- Main IPC: H03K19/0175
- IPC: H03K19/0175

Abstract:
Various embodiments of an on-die termination (ODT) signal generating circuit are disclosed. In one exemplary embodiment, the ODT signal generating circuit includes a latency unit and an ODT control signal generating unit. The latency unit is configured to receive a clock signal and an ODT signal. The latency unit is configured to delay the ODT signal by a predetermined time to generate a first ODT signal. The latency unit is also configured to delay the ODT signal by less than the predetermined time to generate a second ODT signal. The ODT control signal generating unit is configured to provide either one of the first and second ODT signals as an ODT control signal in response to a control signal.
Public/Granted literature
- US20120081144A1 CIRCUIT AND METHOD FOR GENERATING ON-DIE TERMINATION SIGNAL AND SEMICONDUCTOR APPARATUS USING THE SAME Public/Granted day:2012-04-05
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