Invention Grant
US08436641B2 Circuit and method for generating on-die termination signal and semiconductor apparatus using the same 有权
用于产生片上终端信号的电路和方法及使用其的半导体装置

  • Patent Title: Circuit and method for generating on-die termination signal and semiconductor apparatus using the same
  • Patent Title (中): 用于产生片上终端信号的电路和方法及使用其的半导体装置
  • Application No.: US12968141
    Application Date: 2010-12-14
  • Publication No.: US08436641B2
    Publication Date: 2013-05-07
  • Inventor: Choung Ki Song
  • Applicant: Choung Ki Song
  • Applicant Address: KR Gyeonggi-do
  • Assignee: SK Hynix Inc.
  • Current Assignee: SK Hynix Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: William Park & Associates Ltd.
  • Priority: KR10-2010-0095619 20100930
  • Main IPC: H03K19/0175
  • IPC: H03K19/0175
Circuit and method for generating on-die termination signal and semiconductor apparatus using the same
Abstract:
Various embodiments of an on-die termination (ODT) signal generating circuit are disclosed. In one exemplary embodiment, the ODT signal generating circuit includes a latency unit and an ODT control signal generating unit. The latency unit is configured to receive a clock signal and an ODT signal. The latency unit is configured to delay the ODT signal by a predetermined time to generate a first ODT signal. The latency unit is also configured to delay the ODT signal by less than the predetermined time to generate a second ODT signal. The ODT control signal generating unit is configured to provide either one of the first and second ODT signals as an ODT control signal in response to a control signal.
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