Invention Grant
US08436482B2 Semiconductor device, and method of fabricating semiconductor device
有权
半导体器件以及半导体器件的制造方法
- Patent Title: Semiconductor device, and method of fabricating semiconductor device
- Patent Title (中): 半导体器件以及半导体器件的制造方法
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Application No.: US12792036Application Date: 2010-06-02
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Publication No.: US08436482B2Publication Date: 2013-05-07
- Inventor: Tadashi Yamaguchi
- Applicant: Tadashi Yamaguchi
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Volentine & Whitt, PLLC
- Priority: JP2009-154054 20090629
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/48
Abstract:
There is provided a semiconductor device including: an insulating layer provided on a substrate and formed with plural cavities; wiring lines provided on the insulating layer; plural branched wiring lines that branch from the wiring lines so as to respectively overlap with the plural cavities when seen in plan view; a conductive portion formed on the wiring lines; an external terminal formed on the conductive portion; and a sealing resin layer that seals the wiring lines and the conductive portion.
Public/Granted literature
- US20100327454A1 SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2010-12-30
Information query
IPC分类:
