Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US12832272Application Date: 2010-07-08
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Publication No.: US08436474B2Publication Date: 2013-05-07
- Inventor: Young-Hee Yoon , Ju-Young Kim
- Applicant: Young-Hee Yoon , Ju-Young Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0049585 20100527
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
A semiconductor integrated circuit includes first power supply through-chip vias formed through the semiconductor chip to be in a line in a first direction of the semiconductor chip, second power supply through-chip vias formed through the semiconductor chip to be in, first power lines arranged in a second direction, wherein each of the plurality of first power lines is coupled to each of the first power supply through-chip vias, and second power lines arranged in the second direction, wherein each of the plurality of second power lines is coupled to each of the second power supply through-chip vias.
Public/Granted literature
- US20110291289A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2011-12-01
Information query
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