Invention Grant
US08436472B2 Corner stress release structure design for increasing circuit routing areas
有权
拐角应力释放结构设计,增加电路布线面积
- Patent Title: Corner stress release structure design for increasing circuit routing areas
- Patent Title (中): 拐角应力释放结构设计,增加电路布线面积
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Application No.: US12702831Application Date: 2010-02-09
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Publication No.: US08436472B2Publication Date: 2013-05-07
- Inventor: Hsien-Wei Chen
- Applicant: Hsien-Wei Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
An integrated circuit structure includes a semiconductor chip, which further includes a corner and a seal ring dispatched adjacent edges of the semiconductor chip; and a corner stress release (CSR) structure adjacent the corner and physically adjoining the seal ring. The CSR structure includes a portion in a top metallization layer. A circuit component selected from the group consisting essentially of an interconnect structure and an active circuit is directly underlying the CSR structure.
Public/Granted literature
- US20110193198A1 Corner Stress Release Structure Design for Increasing Circuit Routing Areas Public/Granted day:2011-08-11
Information query
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