Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the semiconductor device
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Application No.: US12529925Application Date: 2008-03-03
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Publication No.: US08436465B2Publication Date: 2013-05-07
- Inventor: Isao Sugaya
- Applicant: Isao Sugaya
- Applicant Address: JP Tokyo
- Assignee: Nikon Corporation
- Current Assignee: Nikon Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2007-055351 20070306; JP2007-091083 20070330
- International Application: PCT/JP2008/053768 WO 20080303
- International Announcement: WO2008/108334 WO 20080912
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L21/00
Abstract:
At least a part of a heat radiation member (9) connected to a DRAM (11) for radiating heat of the DRAM (11) is exposed from a protection member (4) arranged to surround the DRAM and the heat radiation member (9) so as to protect the DRAM (11). Thus, it is possible to provide a semiconductor device having a preferable heat radiation performance.
Public/Granted literature
- US20100109154A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2010-05-06
Information query
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