Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13499253Application Date: 2010-05-21
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Publication No.: US08436461B2Publication Date: 2013-05-07
- Inventor: Hirotaka Ohno
- Applicant: Hirotaka Ohno
- Applicant Address: JP Toyota-shi
- Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee Address: JP Toyota-shi
- Agency: Kenyon & Kenyon LLP
- International Application: PCT/JP2010/058586 WO 20100521
- International Announcement: WO2011/145202 WO 20111124
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52

Abstract:
Disclosed is a semiconductor device wherein the adhesion of resin to a substrate is improved at a low cost. A semiconductor element and one or two substrates opposing one or both of the surfaces of the semiconductor element are sealed by a resin, a resin bonding coat which is formed by spraying a metal powder by a cold spray method is formed on one or both of the substrates, and recess portions which are widened from a film surface in a depth direction are formed on the resin bonding coat.
Public/Granted literature
- US20120181685A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-07-19
Information query
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