Invention Grant
- Patent Title: RF MEMS switch and fabricating method thereof
- Patent Title (中): RF MEMS开关及其制造方法
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Application No.: US13049864Application Date: 2011-03-16
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Publication No.: US08436432B2Publication Date: 2013-05-07
- Inventor: Jun-Kai Mao , Chiung-l Lee
- Applicant: Jun-Kai Mao , Chiung-l Lee
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW99146770A 20101230
- Main IPC: B81B3/00
- IPC: B81B3/00

Abstract:
A RF MEMS switch includes a substrate, a first electrode, a first insulating layer, a second insulating layer, a second electrode and a movable electrode. The first electrode is disposed on the substrate. The first insulating layer covers the first electrode. The second insulating layer covers a portion of the substrate. The second electrode is disposed in the second insulating layer and is located at a plane different from a plane of the first electrode. The movable electrode is partially disposed on a surface of the second insulating layer, and extends over the first electrode and the second electrode. A portion of the movable electrode not disposed on the surface of the second insulating layer is a movable portion. The second insulating layer has a gap exposing a space between the movable portion and the first insulating layer and a space between the movable portion and the second electrode.
Public/Granted literature
- US20120168883A1 RF MEMS SWITCH AND FABRICATING METHOD THEREOF Public/Granted day:2012-07-05
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