Invention Grant
US08436425B2 SOI semiconductor device comprising substrate diodes having a topography tolerant contact structure
有权
SOI半导体器件包括具有地形容忍接触结构的衬底二极管
- Patent Title: SOI semiconductor device comprising substrate diodes having a topography tolerant contact structure
- Patent Title (中): SOI半导体器件包括具有地形容忍接触结构的衬底二极管
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Application No.: US12915168Application Date: 2010-10-29
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Publication No.: US08436425B2Publication Date: 2013-05-07
- Inventor: Jens Heinrich , Kai Frohberg , Kerstin Ruttloff
- Applicant: Jens Heinrich , Kai Frohberg , Kerstin Ruttloff
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102010001398 20100129
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
In an SOI semiconductor device, substrate diodes may be formed on the basis of a superior design of the contact level and the metallization layer, thereby avoiding the presence of metal lines connecting to both diode electrodes in the critical substrate diode area. To this end, contact trenches may be provided so as to locally connect one type of diode electrodes within the contact level. Consequently, additional process steps for planarizing the surface topography upon forming the contact level may be avoided.
Public/Granted literature
- US20110186929A1 SOI SEMICONDUCTOR DEVICE COMPRISING SUBSTRATE DIODES HAVING A TOPOGRAPHY TOLERANT CONTACT STRUCTURE Public/Granted day:2011-08-04
Information query
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