Invention Grant
- Patent Title: Semiconductor device with high-breakdown-voltage transistor
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Application No.: US13291162Application Date: 2011-11-08
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Publication No.: US08436419B2Publication Date: 2013-05-07
- Inventor: Akira Yamada , Nozomu Akagi
- Applicant: Akira Yamada , Nozomu Akagi
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2007-292047 20071109; JP2008-231833 20080910
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/02
Abstract:
A semiconductor device includes a high-breakdown-voltage transistor having a semiconductor layer. The semiconductor layer has an element portion and a wiring portion. The element portion has a first wiring on a front side of the semiconductor layer and a backside electrode on a back side of the semiconductor layer. The element portion is configured as a vertical transistor that causes an electric current to flow in a thickness direction of the semiconductor layer between the first wiring and the backside electrode. The backside electrode is elongated to the wiring portion. The wiring portion has a second wiring on the front side of the semiconductor layer. The wiring portion and the backside electrode provide a pulling wire that allows the electric current to flow to the second wiring.
Public/Granted literature
- US20120049271A1 SEMICONDUCTOR DEVICE WITH HIGH-BREAKDOWN-VOLTAGE TRANSISTOR Public/Granted day:2012-03-01
Information query
IPC分类:
