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Invention Grant
US08436402B2 Exposure mask used for manufacturing a semiconductor device having impurity layer and a semiconductor device 失效
用于制造具有杂质层的半导体器件和半导体器件的曝光掩模

Exposure mask used for manufacturing a semiconductor device having impurity layer and a semiconductor device
Abstract:
An exposure mask according to an embodiment of the invention includes a first transmission region where a plurality of dots through which light is shielded or transmitted are arrayed into a matrix form having rows and columns and a second transmission region where a plurality of dots through which the light is shielded or transmitted are arrayed into a matrix form having rows and columns and is disposed adjacent to the first transmission region.The dots arrayed in a row or a column of the first transmission region, which is adjacent to the second transmission region, have an area intermediate between areas of dots arrayed on both sides of the row or the column.
Abstract(Chinese):

根据本发明的实施例的曝光掩模包括第一透射区域，其中光被屏蔽或透射的多个点排列成具有行和列的矩阵形式，以及第二透射区域，其中多个点 光被屏蔽或透射排列成具有行和列的矩阵形式并且被布置为与第一透射区相邻。 排列在与第二透射区域相邻的第一透射区域的行或列中的点具有在排或列的两侧排列的点的区域之间的区域。

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