Invention Grant
- Patent Title: Semiconductor light emitting device and method for manufacturing the same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US13028920Application Date: 2011-02-16
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Publication No.: US08436384B2Publication Date: 2013-05-07
- Inventor: Ho Sang Yoon
- Applicant: Ho Sang Yoon
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2007-0036857 20070416
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer.
Public/Granted literature
- US20110133230A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-06-09
Information query
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