Invention Grant
- Patent Title: Schottky diode structure and method for fabricating the same
- Patent Title (中): 肖特基二极管结构及其制造方法
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Application No.: US12816765Application Date: 2010-06-16
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Publication No.: US08436361B2Publication Date: 2013-05-07
- Inventor: Shuo-Hung Hsu , Yi-Wei Lian , Yu-Syuan Lin
- Applicant: Shuo-Hung Hsu , Yi-Wei Lian , Yu-Syuan Lin
- Applicant Address: TW Hsinchu
- Assignee: National Tsing Hua University
- Current Assignee: National Tsing Hua University
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Main IPC: H01L31/0256
- IPC: H01L31/0256
Abstract:
A Schottky diode structure and a method for fabricating the same, which are based on the principle of charge compensation, wherein a P-type gallium nitride layer is added to a Schottky diode structure, and wherein the PN junction of the P-type gallium nitride layer and the N-type gallium nitride layer decreases the non-uniformity of the surface electric field distribution, whereby the breakdown voltage of the element is raised.
Public/Granted literature
- US20110309371A1 SCHOTTKY DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2011-12-22
Information query
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