Invention Grant
US08436360B2 Thin film transistor, method of fabricating the same, and organic lighting emitting diode display device including the same
有权
薄膜晶体管及其制造方法以及包括该薄膜晶体管的有机发光二极管显示装置
- Patent Title: Thin film transistor, method of fabricating the same, and organic lighting emitting diode display device including the same
- Patent Title (中): 薄膜晶体管及其制造方法以及包括该薄膜晶体管的有机发光二极管显示装置
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Application No.: US13333587Application Date: 2011-12-21
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Publication No.: US08436360B2Publication Date: 2013-05-07
- Inventor: Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee , Dong-Hyun Lee
- Applicant: Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee , Dong-Hyun Lee
- Applicant Address: KR Yongin
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2008-0028324 20080327
- Main IPC: H01L29/04
- IPC: H01L29/04

Abstract:
A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, including a channel region, source/drain regions, and a body contact region; a gate insulating layer disposed on the semiconductor layer so as to expose the body contact region; a gate electrode disposed on the gate insulating layer, so as to contact the body contact region; an interlayer insulating layer disposed on the gate electrode; and source/drain electrodes disposed on the interlayer insulating layer and electrically connected to the source/drain regions. The body contact region is formed in an edge of the semiconductor layer.
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