Invention Grant
US08436350B2 Semiconductor device using an oxide semiconductor with a plurality of metal clusters
有权
使用具有多个金属簇的氧化物半导体的半导体器件
- Patent Title: Semiconductor device using an oxide semiconductor with a plurality of metal clusters
- Patent Title (中): 使用具有多个金属簇的氧化物半导体的半导体器件
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Application No.: US12692794Application Date: 2010-01-25
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Publication No.: US08436350B2Publication Date: 2013-05-07
- Inventor: Shunpei Yamazaki , Junichiro Sakata , Hideyuki Kishida
- Applicant: Shunpei Yamazaki , Junichiro Sakata , Hideyuki Kishida
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-019922 20090130
- Main IPC: H01L29/10
- IPC: H01L29/10
Abstract:
In forming a thin film transistor, an oxide semiconductor layer is used and a cluster containing a titanium compound whose electrical conductance is higher than that of the oxide semiconductor layer is formed between the oxide semiconductor layer and a gate insulating layer.
Public/Granted literature
- US20100193783A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2010-08-05
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