Invention Grant
US08436333B2 Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method 有权
硅发光二极管,硅光晶体管,硅激光器及其制造方法

Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method
Abstract:
A light-emitting device according to the present invention includes a first electrode unit for injecting an electron, a second electrode unit for injecting a hole, and light-emitting units and electrically connected to the first electrode unit and the second electrode unit respectively, wherein the light-emitting units and are formed of single-crystal silicon, the light-emitting units and having a first surface (topside surface) and a second surface (underside surface) opposed to the first surface, plane orientation of the first and second surfaces being set to a (100) plane, thicknesses of the light-emitting units and in a direction orthogonal to the first and second surfaces being made extremely thin.
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