Invention Grant
- Patent Title: Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method
- Patent Title (中): 硅发光二极管,硅光晶体管,硅激光器及其制造方法
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Application No.: US11790283Application Date: 2007-04-24
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Publication No.: US08436333B2Publication Date: 2013-05-07
- Inventor: Shinichi Saito , Digh Hisamoto , Tadashi Arai , Takahiro Onai
- Applicant: Shinichi Saito , Digh Hisamoto , Tadashi Arai , Takahiro Onai
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2006-120065 20060425
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
A light-emitting device according to the present invention includes a first electrode unit for injecting an electron, a second electrode unit for injecting a hole, and light-emitting units and electrically connected to the first electrode unit and the second electrode unit respectively, wherein the light-emitting units and are formed of single-crystal silicon, the light-emitting units and having a first surface (topside surface) and a second surface (underside surface) opposed to the first surface, plane orientation of the first and second surfaces being set to a (100) plane, thicknesses of the light-emitting units and in a direction orthogonal to the first and second surfaces being made extremely thin.
Public/Granted literature
- US20080128713A1 Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method Public/Granted day:2008-06-05
Information query
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