Invention Grant
US08416623B2 Reference voltage optimization for flash memory 有权
Flash存储器参考电压优化

Reference voltage optimization for flash memory
Abstract:
A system includes a voltage generator and a reference voltage setting module. The voltage generator is configured to generate K voltages to be applied to memory cells. The K voltages are used to determine a reference voltage used to read the memory cells, where K is an integer greater than 1. The reference voltage setting module is configured to selectively set the reference voltage to a value between two adjacent ones of the K voltages or one of the two adjacent ones of the K voltages.
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