Invention Grant
- Patent Title: Reference voltage optimization for flash memory
- Patent Title (中): Flash存储器参考电压优化
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Application No.: US13447789Application Date: 2012-04-16
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Publication No.: US08416623B2Publication Date: 2013-04-09
- Inventor: Xueshi Yang
- Applicant: Xueshi Yang
- Applicant Address: BB St. Michael
- Assignee: Marvell World Trade Ltd.
- Current Assignee: Marvell World Trade Ltd.
- Current Assignee Address: BB St. Michael
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A system includes a voltage generator and a reference voltage setting module. The voltage generator is configured to generate K voltages to be applied to memory cells. The K voltages are used to determine a reference voltage used to read the memory cells, where K is an integer greater than 1. The reference voltage setting module is configured to selectively set the reference voltage to a value between two adjacent ones of the K voltages or one of the two adjacent ones of the K voltages.
Public/Granted literature
- US20120236655A1 Reference Voltage Optimization for Flash Memory Public/Granted day:2012-09-20
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