Invention Grant
- Patent Title: Writable magnetic memory element
- Patent Title (中): 可写磁记忆元件
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Application No.: US12899091Application Date: 2010-10-06
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Publication No.: US08416618B2Publication Date: 2013-04-09
- Inventor: Gilles Gaudin , Ioan Mihai Miron , Pietro Gambardella , Alain Schuhl
- Applicant: Gilles Gaudin , Ioan Mihai Miron , Pietro Gambardella , Alain Schuhl
- Applicant Address: FR Paris FR Paris FR Grenoble Cedex ES Bellaterra ES Barcelona
- Assignee: Centre National de la Recherche Scientifique,Commissariat a l'Energie Atomique et aux Energies Alternatives,Universite Joseph Fourier,Institut Catala de Nanotechnologia (ICN),Institucio Catalana de Recerca I Estudis Avancats (ICREA)
- Current Assignee: Centre National de la Recherche Scientifique,Commissariat a l'Energie Atomique et aux Energies Alternatives,Universite Joseph Fourier,Institut Catala de Nanotechnologia (ICN),Institucio Catalana de Recerca I Estudis Avancats (ICREA)
- Current Assignee Address: FR Paris FR Paris FR Grenoble Cedex ES Bellaterra ES Barcelona
- Agency: Alston & Bird LLP
- Priority: FR1003123 20100726
- Main IPC: G11C11/14
- IPC: G11C11/14

Abstract:
The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is parallel or perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, wherein it includes a device for causing current to flow through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field having a component along a magnetic field direction that is either parallel or perpendicular to the plane of the central layer and the current flow direction, and wherein the magnetization direction and the magnetic field direction are mutually perpendicular.
Public/Granted literature
- US20120020152A1 Writable Magnetic Memory Element Public/Granted day:2012-01-26
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