Invention Grant
- Patent Title: Spin-transfer torque memory non-destructive self-reference read method
- Patent Title (中): 旋转转矩记忆无损自参考读取方法
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Application No.: US13349044Application Date: 2012-01-12
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Publication No.: US08416614B2Publication Date: 2013-04-09
- Inventor: Yiran Chen , Hai Li , Hongyue Liu , Ran Wang , Dimitar V. Dimitrov
- Applicant: Yiran Chen , Hai Li , Hongyue Liu , Ran Wang , Dimitar V. Dimitrov
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raasch & Gebhardt PA
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. The magnetic tunnel junction data cell has a first resistance state. Then the method includes applying a second read current thorough the magnetic tunnel junction data cell having the first resistance state. The first read current is less than the second read current. Then the first bit line read voltage is compared with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.
Public/Granted literature
- US20120127787A1 SPIN-TRANSFER TORQUE MEMORY NON-DESTRUCTIVE SELF-REFERENCE READ METHOD Public/Granted day:2012-05-24
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