Invention Grant
- Patent Title: Magnetoresistive bridge nonvolatile memory device
- Patent Title (中): 磁阻桥非易失性存储器件
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Application No.: US13064939Application Date: 2011-04-27
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Publication No.: US08416613B1Publication Date: 2013-04-09
- Inventor: Lance L. Sundstrom
- Applicant: Lance L. Sundstrom
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Secretary of the Navy
- Current Assignee: The United States of America as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agent John Tarlano
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A magnetoresistive bridge nonvolatile memory device having a flat, continuous folded closed magnetic loop, the magnetic loop having a side for holding four sense metal terminated magnetic shunts, and four planar central parallel rectangular giant magnetoresistive GMR resistors, each of the four central parallel rectangular giant magnetoresistive GMR resistors being located on the side of the continuous folded closed magnetic loop between each of two of the sense metal terminated magnetic shunts, each two of the four sense metal terminated magnetic shunts electrically connected to adjacent ends of a central parallel rectangular giant magnetoresistive GMR resistor.
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