Invention Grant
- Patent Title: Magnetic field sensing system using spin-torque diode effect
- Patent Title (中): 磁场感应系统采用自旋转矩二极管效应
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Application No.: US12188183Application Date: 2008-08-07
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Publication No.: US08416539B2Publication Date: 2013-04-09
- Inventor: Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
- Applicant: Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agent Thomas R. Berthold
- Main IPC: G11B5/33
- IPC: G11B5/33 ; G11B5/127

Abstract:
A magnetic field sensing system with a current-perpendicular-to-the-plane (CPP) sensor, like that used for giant magnetoresistive (GMR) and tunneling magnetoresistive (TMR) spin-valve (SV) sensors, operates in a mode different from conventional GMR-SV and TMR-SV systems. An alternating-current (AC) source operates at a fixed selected frequency and directs AC perpendicularly through the layers of the CPP sensor, with the AC amplitude being high enough to deliberately induce a spin-torque in the CPP sensor's free layer. The AC-induced spin-torque at the selected frequency causes oscillations in the magnetization of the free layer that give rise to a DC voltage signal VDC. VDC is a direct result of only the oscillations induced in the free layer. The value of VDC will change in response to the magnitude of the external magnetic field being sensed and as the free layer is driven in and out of resonance with the AC.
Public/Granted literature
- US20100033881A1 MAGNETIC FIELD SENSING SYSTEM USING SPIN-TORQUE DIODE EFFECT Public/Granted day:2010-02-11
Information query
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