Invention Grant
- Patent Title: Plasma monitoring device and method
- Patent Title (中): 等离子体监测装置及方法
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Application No.: US12595365Application Date: 2008-04-10
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Publication No.: US08416293B2Publication Date: 2013-04-09
- Inventor: Heung Hyun Shin , Woo Jung Ahn
- Applicant: Heung Hyun Shin , Woo Jung Ahn
- Applicant Address: KR Seoul
- Assignee: SNU Precision Co. Ltd.
- Current Assignee: SNU Precision Co. Ltd.
- Current Assignee Address: KR Seoul
- Agency: Volpe and Koenig, P.C.
- Priority: KR10-2007-0037896 20070418
- International Application: PCT/KR2008/001999 WO 20080410
- International Announcement: WO2008/130118 WO 20081030
- Main IPC: B05B1/00
- IPC: B05B1/00 ; B05B15/00 ; A61B1/06

Abstract:
A plasma monitoring device includes a plasma supplier including a power supply, a reaction gas supply line, and an emission nozzle for emitting plasma, which is generated therein, toward an object; a camera unit for obtaining an image of the plasma emission state; and a controller for obtaining a measurement value by converting pixel information of the image into a numerical value and comparing it with a reference value, which is a measurement value in a normal emission state, to check the plasma emission state. The camera unit obtains an image of the plasma emission state, and the controller analyzes the image to obtain a measurement value, which is used to monitor the state of plasma in real time and control the amount of reaction gas supplied to the plasma supplier and the plasma discharge condition, so that plasma is evenly emitted from the plasma supplier.
Public/Granted literature
- US20100149326A1 PLASMA MONITORING DEVICE AND METHOD Public/Granted day:2010-06-17
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