Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11730086Application Date: 2007-03-29
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Publication No.: US08416220B2Publication Date: 2013-04-09
- Inventor: Jun Koyama , Takeshi Osada , Takanori Matsuzaki
- Applicant: Jun Koyama , Takeshi Osada , Takanori Matsuzaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2003-310767 20030902
- Main IPC: G06F3/038
- IPC: G06F3/038 ; G09G5/00

Abstract:
A rectifier circuit configured with a conventional configuration using an operational amplifier and a diode by a thin film transistor over an insulating substrate cannot exhibit the performance of a rectifier circuit due to the low stability of operational amplifier and the low high-frequency characteristic. Therefore, the rectifier circuit requires to be configured by using an IC outside of the insulating substrate in order to rectify a high-frequency signal. According to the invention, an amplifier circuit and a waveform shaping circuit are configured with a thin film transistor and a non-rectified signal is switched by a signal thereof, so that a rectifier circuit with the excellent high-frequency characteristic can be realized.
Public/Granted literature
- US20070188214A1 Semiconductor device Public/Granted day:2007-08-16
Information query
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