Invention Grant
US08416009B2 Solutions for controlling bulk bias voltage in an extremely thin silicon-on-insulator (ETSOI) integrated circuit chip
有权
用于在非常薄的绝缘体上(ETSOI)集成电路芯片上控制体偏置的解决方案
- Patent Title: Solutions for controlling bulk bias voltage in an extremely thin silicon-on-insulator (ETSOI) integrated circuit chip
- Patent Title (中): 用于在非常薄的绝缘体上(ETSOI)集成电路芯片上控制体偏置的解决方案
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Application No.: US13181754Application Date: 2011-07-13
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Publication No.: US08416009B2Publication Date: 2013-04-09
- Inventor: Hayden C. Cranford, Jr. , Terence B. Hook
- Applicant: Hayden C. Cranford, Jr. , Terence B. Hook
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent David A. Cain
- Main IPC: H01L27/12
- IPC: H01L27/12

Abstract:
Solutions for optimizing a bulk bias across a substrate of an ETSOI device are disclosed. In one embodiment, an apparatus for optimizing a bulk bias across a substrate of an ETSOI device is disclosed, including: a sensing circuit for sensing at least one predetermined circuit parameter; a charging circuit for applying a bias voltage to the substrate of the ETSOI device; and a processing circuit connected to the sensing circuit and the charging circuit, the processing circuit configured to receive an output of the sensing circuit, and adjust the bias voltage applied to substrate of the ETSOI device in response to determining whether the bias voltage deviates from a target amount.
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