Invention Grant
- Patent Title: Semiconductor device having a conductor buried in an opening
- Patent Title (中): 具有埋在开口中的导体的半导体器件
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Application No.: US12816704Application Date: 2010-06-16
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Publication No.: US08415798B2Publication Date: 2013-04-09
- Inventor: Nobuyuki Ohtsuka , Noriyoshi Shimizu
- Applicant: Nobuyuki Ohtsuka , Noriyoshi Shimizu
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device includes a first conductor formed over a semiconductor device; an insulation film formed over the semiconductor substrate and the first conductor and having an opening arriving at the first conductor; a first film formed in the opening and formed of a compound containing Zr; a second film formed over the first film in the opening and formed of an oxide containing Mn; and a second conductor buried in the opening and containing Cu.
Public/Granted literature
- US20100252928A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2010-10-07
Information query
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