Invention Grant
- Patent Title: Spacer structure wherein carbon-containing oxide film formed within
- Patent Title (中): 其中形成有碳氧化物膜的间隔结构
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Application No.: US13490482Application Date: 2012-06-07
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Publication No.: US08415723B2Publication Date: 2013-04-09
- Inventor: Po-Lun Cheng , Che-Hung Liu
- Applicant: Po-Lun Cheng , Che-Hung Liu
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94
Abstract:
A spacer structure contains a carbon-containing oxide film positioned on a gate sidewall and a nitride film covering the carbon-containing oxide film. The carbon-containing oxide film has low etch rate so that the spacer structure can have a good profile during etching the carbon-containing oxide film.
Public/Granted literature
- US20120241824A1 SPACER STRUCTURE WHEREIN CARBON-CONTAINING OXIDE FILM FORMED WITHIN Public/Granted day:2012-09-27
Information query
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