Invention Grant
- Patent Title: Modified B+ tree to store NAND memory indirection maps
- Patent Title (中): 修改B +树存储NAND内存间接映射
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Application No.: US12645170Application Date: 2009-12-22
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Publication No.: US08412881B2Publication Date: 2013-04-02
- Inventor: Nathanial Kiel Boyle
- Applicant: Nathanial Kiel Boyle
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F13/28 ; G06F9/26 ; G06F9/34 ; G06F7/00 ; G06F17/30

Abstract:
Embodiments of the invention generally pertain to memory devices and more specifically to reducing the write amplification of memory devices without increasing cache requirements. Embodiments of the present invention may be represented as a modified B+ tree in that said tree comprises a multi-level tree in which all data items are stored in the leaf nodes of the tree. Each non-leaf node in the tree will reference a large number of nodes in the next level down from the tree. Modified B+ trees described herein may be represented as data structures used to map memory device page addresses. The entire modified B+ tree used to map said pages may be stored on the same memory device requiring limited amounts of cache. These embodiments may be utilized by low cost controllers that require good sequential read and write performance without large amounts of cache.
Public/Granted literature
- US20110153979A1 MODIFIED B+ TREE TO STORE NAND MEMORY INDIRECTION MAPS Public/Granted day:2011-06-23
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