Invention Grant
- Patent Title: Semiconductor memory apparatus
- Patent Title (中): 半导体存储装置
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Application No.: US12948936Application Date: 2010-11-18
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Publication No.: US08411512B2Publication Date: 2013-04-02
- Inventor: Chul Kim , Jong Chern Lee
- Applicant: Chul Kim , Jong Chern Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2010-0051301 20100531
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/22

Abstract:
A semiconductor memory apparatus includes: a memory cell array including a plurality of memory cells; a bit line sense amplifier (BLSA) coupled to the memory cells in the memory cell array through a bit line; a plurality of local input/output lines coupled to the BLSA; and a switching unit coupled to the local input/output lines and configured to select a part of the local input/output lines.
Public/Granted literature
- US20110292707A1 SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2011-12-01
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