Invention Grant
- Patent Title: Information storage devices using magnetic domain wall movement and methods of manufacturing the same
- Patent Title (中): 使用磁畴壁运动的信息存储装置及其制造方法相同
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Application No.: US13200358Application Date: 2011-09-23
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Publication No.: US08411481B2Publication Date: 2013-04-02
- Inventor: Chee-kheng Lim
- Applicant: Chee-kheng Lim
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0133095 20061222; KR10-2006-0138862 20061229; KR10-2006-0138866 20061229
- Main IPC: G11C19/00
- IPC: G11C19/00
Abstract:
In an information storage device, a writing magnetic layer is formed on a substrate and has a magnetic domain wall. A connecting magnetic layer is formed on the writing magnetic layer, and an information storing magnetic layer is formed on an upper portion of side surfaces of the connecting magnetic layer. A reader reads information stored in the information storing magnetic layer.
Public/Granted literature
- US20120015452A1 Information storage devices using magnetic domain wall movement and methods of manufacturing the same Public/Granted day:2012-01-19
Information query
