Invention Grant
- Patent Title: Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface
- Patent Title (中): 在发光表面具有密集磷光体层的半导体发光器件
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Application No.: US12887097Application Date: 2010-09-21
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Publication No.: US08410679B2Publication Date: 2013-04-02
- Inventor: James Ibbetson , Peter S. Andrews
- Applicant: James Ibbetson , Peter S. Andrews
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01J1/62
- IPC: H01J1/62 ; H01J9/00
Abstract:
An LED includes a chip having a light emitting surface, and a coating of phosphor-containing material on the light emitting surface. Phosphor particles are arranged in a densely packed layer within the coating at the light emitting surface, and such that the light emitting surface is in contacting relationship with the phosphor particles.
Public/Granted literature
- US20120068594A1 Semiconductor Light Emitting Devices with Densely Packed Phosphor Layer at Light Emitting Surface Public/Granted day:2012-03-22
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