Invention Grant
US08410474B2 Graphene grown substrate and electronic/photonic integrated circuits using same
失效
石墨烯生长衬底和电子/光子集成电路使用相同
- Patent Title: Graphene grown substrate and electronic/photonic integrated circuits using same
- Patent Title (中): 石墨烯生长衬底和电子/光子集成电路使用相同
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Application No.: US13010075Application Date: 2011-01-20
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Publication No.: US08410474B2Publication Date: 2013-04-02
- Inventor: Makoto Okai , Motoyuki Hirooka , Yasuo Wada
- Applicant: Makoto Okai , Motoyuki Hirooka , Yasuo Wada
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2010-015088 20100121; JP2010-169124 20100728
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A substrate having a graphene film grown thereon according to the present invention includes: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having an average composition of Al2−xO3+x (where x is 0 or more); and a graphene film preferentially grown only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the patterned aluminum oxide film, the graphene film having an electrical conductivity of 1×104 S/cm or more measured by a four-probe resistive method using an inter-voltage-probe distance of 0.2 mm.
Public/Granted literature
- US20110175060A1 GRAPHENE GROWN SUBSTRATE AND ELECTRONIC/PHOTONIC INTEGRATED CIRCUITS USING SAME Public/Granted day:2011-07-21
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