Invention Grant
- Patent Title: Solid-state imaging device, method for manufacturing the same, and imaging apparatus
- Patent Title (中): 固态成像装置及其制造方法以及成像装置
-
Application No.: US12598691Application Date: 2007-08-20
-
Publication No.: US08410418B2Publication Date: 2013-04-02
- Inventor: Tetsuji Yamaguchi , Yuko Ohgishi , Takashi Ando , Harumi Ikeda
- Applicant: Tetsuji Yamaguchi , Yuko Ohgishi , Takashi Ando , Harumi Ikeda
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2007-122370 20070507
- International Application: PCT/JP2007/066116 WO 20070820
- International Announcement: WO2008/139644 WO 20081120
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/18
Abstract:
Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1 having a light-receiving portion 12 to photoelectrically convert incident light is characterized by including a film 21, which is disposed on a light-receiving surface 12s of the above-described light-receiving portion 12 and which lowers an interface state, and a film 22, which is disposed on the above-described film 21 to lower the interface state and which has a negative fixed charge, wherein a hole accumulation layer 23 is disposed on the light-receiving surface 12s side of the light-receiving portion 12.
Public/Granted literature
- US20100193669A1 SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND IMAGING APPARATUS Public/Granted day:2010-08-05
Information query
IPC分类:
