Invention Grant
US08407564B2 Prediction and cancellation of systematic noise sources in non-volatile memory
有权
非易失性存储器中系统噪声源的预测和消除
- Patent Title: Prediction and cancellation of systematic noise sources in non-volatile memory
- Patent Title (中): 非易失性存储器中系统噪声源的预测和消除
-
Application No.: US12460221Application Date: 2009-07-15
-
Publication No.: US08407564B2Publication Date: 2013-03-26
- Inventor: Scott Nelson , Chun Fung Kitter Man
- Applicant: Scott Nelson , Chun Fung Kitter Man
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Christopher K. Gagne
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/34

Abstract:
Various embodiments of the invention pertain to a technique of recovering data from a portion of a non-volatile memory which was not reliably read because the number of read errors exceeded the ability of the ECC process to correct those errors. For each cell in that portion of memory, a quantized estimate is made of the amount of offset in the read reference voltage that is predicted to correct for any systematic noise that may have affected the reading of that cell. For each quantized offset, the read reference voltage is adjusted by that amount and data from the relevant cells is read. The combined results for all the cells are then processed through the ECC again.
Public/Granted literature
- US20110016372A1 Prediction and cancellation of systematic noise sources in non-volatile memory Public/Granted day:2011-01-20
Information query