Invention Grant
US08407449B1 Non-volatile semiconductor memory storing an inverse map for rebuilding a translation table
有权
存储用于重建翻译表的反向映射的非易失性半导体存储器
- Patent Title: Non-volatile semiconductor memory storing an inverse map for rebuilding a translation table
- Patent Title (中): 存储用于重建翻译表的反向映射的非易失性半导体存储器
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Application No.: US12714350Application Date: 2010-02-26
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Publication No.: US08407449B1Publication Date: 2013-03-26
- Inventor: Kevin M. Colon , Charles P. Rainey, III
- Applicant: Kevin M. Colon , Charles P. Rainey, III
- Applicant Address: US CA Irvine
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA Irvine
- Main IPC: G06F12/10
- IPC: G06F12/10

Abstract:
A non-volatile semiconductor memory is disclosed comprising a non-volatile memory array including a plurality of blocks, each block comprising a plurality of memory segments each assigned a physical address. A logical address is read from a first block, wherein the logical address corresponds to a physical address of one of the memory segments. When the memory segment corresponding to the logical address is valid, a translation table is updated using the logical address, wherein the translation table for mapping logical addresses to physical addresses. When the memory segment corresponding to the logical address is invalid, a dirty table is updated using the logical address. The dirty table is used to perform a garbage collection operation, wherein invalid memory segments are erased without being relocated.
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