Invention Grant
- Patent Title: Curvature distribution crystal lens and X-ray reflectometer
- Patent Title (中): 曲率分布晶体透镜和X射线反射计
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Application No.: US12733361Application Date: 2008-08-28
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Publication No.: US08406379B2Publication Date: 2013-03-26
- Inventor: Hiroshi Okuda , Kazuo Nakajima , Kozo Fujiwara
- Applicant: Hiroshi Okuda , Kazuo Nakajima , Kozo Fujiwara
- Applicant Address: JP Kyoto JP Miyagi-Ken
- Assignee: Kyoto University,Tohoku University
- Current Assignee: Kyoto University,Tohoku University
- Current Assignee Address: JP Kyoto JP Miyagi-Ken
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2007-227174 20070831
- International Application: PCT/JP2008/065420 WO 20080828
- International Announcement: WO2009/028613 WO 20090305
- Main IPC: G21K1/06
- IPC: G21K1/06 ; G01N23/20

Abstract:
In one embodiment of the present invention, a curvature distribution crystal lens of the present invention is obtained via press-molding. In the case of a Ge single crystal plate, a temperature for the press-molding is in a range 1° C. to 120° C. lower than a melting point. In the case of a Si single crystal plate, a temperature for the press-molding is in a range 1° C. to 200° C. lower than a melting point. The curvature distribution crystal lens has a crystal lattice plane forming a 1D cylindrically curved surface or a 1D logarithmically curved surface whose valley is in a direction perpendicular to a direction having a maximum curvature, the direction having the maximum curvature being within 30° from a [001] or [1-10] direction in a (110) plane. As a result, it is possible to make an integrated reflection intensity uniform and to make a half-value width uniform in a wide range. Consequently, it is possible to achieve a curvature distribution crystal lens having a wide incident angle range and a high light focusing accuracy.
Public/Granted literature
- US20100208868A1 CURVATURE DISTRIBUTION CRYSTAL LENS AND X-RAY REFLECTOMETER Public/Granted day:2010-08-19
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