Invention Grant
- Patent Title: Ultra-low leakage memory architecture
- Patent Title (中): 超低泄漏存储器架构
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Application No.: US12694032Application Date: 2010-01-26
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Publication No.: US08406075B2Publication Date: 2013-03-26
- Inventor: Cheng Hung Lee , Hung-Jen Liao
- Applicant: Cheng Hung Lee , Hung-Jen Liao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
An integrated circuit structure includes an active power supply line and a data-retention power supply line. A memory macro is connected to the active power supply line and the data-retention power supply line. The memory macro includes a memory cell array and a switch. The switch is configured to switch a connection between connecting the memory cell array to the active power supply line and connecting the memory cell array to the data-retention power supply line. The data-retention power supply line is outside of the memory macro.
Public/Granted literature
- US20100254209A1 Ultra-Low Leakage Memory Architecture Public/Granted day:2010-10-07
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