Invention Grant
US08406069B2 Data writing method and writing device for an electronic erasable read only dynamic memory
失效
电子可擦除只读动态存储器的数据写入方法和写入装置
- Patent Title: Data writing method and writing device for an electronic erasable read only dynamic memory
- Patent Title (中): 电子可擦除只读动态存储器的数据写入方法和写入装置
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Application No.: US13066195Application Date: 2011-04-07
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Publication No.: US08406069B2Publication Date: 2013-03-26
- Inventor: Pary Wu
- Applicant: Pary Wu
- Applicant Address: TW New Taipei
- Assignee: Uni Grand Ltd.
- Current Assignee: Uni Grand Ltd.
- Current Assignee Address: TW New Taipei
- Agency: Quine Intellectual Property Law Group, P.C.
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/22

Abstract:
A data writing method for an EEPROM in an electronic device is performed by a writing device. The electronic device includes a system unit generating a system voltage and a write-protection voltage. The writing device includes a processor stored with data to be written, and connected electrically to a connector with the same interface as that of an expansion connector of the electronic device. When the connector is connected electrically to the expansion connector, the processor generates a write-enable voltage greater than the system voltage upon receipt of the system voltage from the electronic device, and outputs the write-enable voltage to the system unit. The system unit raises the system voltage in response to the write-enable voltage such that the write-protection voltage is smaller than the raised system voltage to thereby enable the EEPROM to operate in a write state, where the processing unit writes the data into the EEPROM.
Public/Granted literature
- US20120110245A1 Data writing method and writing device for an electronic erasable read only dynamic memory Public/Granted day:2012-05-03
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