Invention Grant
- Patent Title: Read only memory and operating method thereof
- Patent Title (中): 只读存储器及其操作方法
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Application No.: US12983985Application Date: 2011-01-04
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Publication No.: US08406058B2Publication Date: 2013-03-26
- Inventor: Ching-Wei Wu , Cheng-Hung Lee , He-Zhou Wan , Wei-Yang Jiang
- Applicant: Ching-Wei Wu , Cheng-Hung Lee , He-Zhou Wan , Wei-Yang Jiang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Priority: CN201010140005 20100402
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A read only memory (ROM) and an operating method thereof are provided. The read only memory includes: a control circuit, powered by a first power source for outputting a control signal within a first voltage range; a voltage shifter, for expanding the amplitude of the control signal to a second voltage range; a word line driver, powered by a second power source with a voltage which is higher than that of the first power source, for driving one of a plurality of word lines of a read only memory cell array according to the control signal which is expanded to be within the second voltage range; and an input/output circuit, for connecting the plurality of bit lines to read out messages.
Public/Granted literature
- US20110242904A1 Read Only Memory and Operating Method Thereof Public/Granted day:2011-10-06
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