Invention Grant
- Patent Title: Capacitor-embedded substrate and method of manufacturing the same
- Patent Title (中): 电容器嵌入式基板及其制造方法
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Application No.: US12191454Application Date: 2008-08-14
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Publication No.: US08405953B2Publication Date: 2013-03-26
- Inventor: Tomoharu Fujii , Masahiro Sunohara
- Applicant: Tomoharu Fujii , Masahiro Sunohara
- Applicant Address: JP Nagano-shi
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano-shi
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2007-236663 20070912
- Main IPC: H01G4/002
- IPC: H01G4/002 ; H01G4/005

Abstract:
A capacitor-embedded substrate includes a base material having a desired thickness, and a pair of conductors (feedthrough electrodes) each formed in a desired pattern to penetrate through the base material in the thickness direction thereof, and oppositely disposed with an insulating layer interposed therebetween. The pair of electrodes are formed in comb-shaped patterns, and are oppositely disposed in such a manner that respective comb-tooth portions are meshed with each other.
Public/Granted literature
- US20090067116A1 CAPACITOR-EMBEDDED SUBSTRATE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-03-12
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