An electrostatic discharge (ESD) protection device is provided. The ESD protection device includes a source region and a drain region. The source region is to be coupled to a low-level voltage. The drain region is disposed apart from the source region and includes a first P-type heavily doped region and at least one first N-type heavily doped region. The first P-type heavily doped region is configured to couple to a pad, and the first N-type heavily doped region is adjacent to the first P-type heavily doped region and floated. An electrostatic discharge protection apparatus is also disclosed herein.