Invention Grant
- Patent Title: Fuse of semiconductor memory device
- Patent Title (中): 半导体存储器件保险丝
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Application No.: US12342388Application Date: 2008-12-23
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Publication No.: US08405483B2Publication Date: 2013-03-26
- Inventor: Jeong Soo Kim , Byung Wook Bae
- Applicant: Jeong Soo Kim , Byung Wook Bae
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2008-0100822 20081014
- Main IPC: H01H85/12
- IPC: H01H85/12 ; H01H85/04 ; H01H69/02 ; H01L23/52 ; H01L21/44

Abstract:
A fuse used in a semiconductor memory device. The fuse is formed with a “X” shape where one circuit may be connected simultaneously to a plurality of other circuits. As a result, a fuse region is reduced, and the cutting number is also decreased, thereby lowering the possibility of defects resulting from cutting errors.
Public/Granted literature
- US20100090791A1 Fuse of Semiconductor Memory Device Public/Granted day:2010-04-15
Information query
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