Invention Grant
- Patent Title: Wave detector circuit and high-frequency circuit
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Application No.: US12894245Application Date: 2010-09-30
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Publication No.: US08405446B2Publication Date: 2013-03-26
- Inventor: Shingo Oishi , Toshiya Tsukao
- Applicant: Shingo Oishi , Toshiya Tsukao
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2009-256975 20091110
- Main IPC: H03K17/60
- IPC: H03K17/60 ; H02M7/06
Abstract:
The temperature dependence of detection characteristics in a wave detector circuit is suppressed. A bias resistor and/or a load resistor are/is constituted by a resistive element having a high temperature coefficient, whereby a shift in detected output along with a change in temperature of a wave detector diode included in a diode detector circuit is canceled by a shift in detected output along with a change in temperature of the bias resistor and/or a shift in detected output along with a change in temperature of the load resistor.
Public/Granted literature
- US08432213B2 Wave detector circuit and high-frequency circuit Public/Granted day:2013-04-30
Information query
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