Invention Grant
- Patent Title: Voltage switching in a memory device
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Application No.: US13542250Application Date: 2012-07-05
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Publication No.: US08405444B2Publication Date: 2013-03-26
- Inventor: Giulio G. Marotta , Carlo Musilli , Stefano Perugini , Alessandro Torsi , Tommaso Vali
- Applicant: Giulio G. Marotta , Carlo Musilli , Stefano Perugini , Alessandro Torsi , Tommaso Vali
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
Voltage switches, memory devices, memory systems, and methods for switching are disclosed. One such voltage switch uses a pair of switch circuits coupled in series, each switch circuit being driven by a level shift circuit. Each switch circuit uses a group of series coupled transistors with a parallel control transistor where the number of transistors in each group may be determined by an expected switch input voltage and a maximum allowable voltage drop for each transistor. A voltage of a particular state of an enable signal is shifted up to the switch input voltage by the level shift circuits. The particular state of the enable signal turns on the voltage switch such that the switch output voltage is substantially equal to the switch input voltage.
Public/Granted literature
- US20120269011A1 VOLTAGE SWITCHING IN A MEMORY DEVICE Public/Granted day:2012-10-25
Information query
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